डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTD20 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o |
EDI |
|
NTD20N03L27 | Power MOSFET NTD20N03L27, NVD20N03L27
MOSFET –Power, N-Channel, DPAK
20 A, 30 V
This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost powe |
ON |
|
NTD20N06 | N-channel MOSFET NTD20N06, NTDV20N06
MOSFET – Power, N-Channel, DPAK
20 A, 60 V
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits.
Feature |
ON |
|
NTD20N06L | N-channel MOSFET NTD20N06L, NTDV20N06L
MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK
20 A, 60 V
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bri |
ON Semiconductor |
|
NTD20P06L | Power MOSFET -60 V / -15.5 A / Single P-Channel / DPAK NTD20P06L Power MOSFET
−60 V, −15.5 A, Single P−Channel, DPAK
Features
• Withstands High Energy in Avalanche and Commutation Modes • Low Gate Charge for Fast Switching • Pb−Free Packages are Avai |
ON |
www.DataSheet.in | 2017 | संपर्क |