डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTD12 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o |
EDI |
|
NTD122C | Thyristor/Diode Module Naina Semiconductor Ltd.
NTD122C
Features
Thyristor/Diode Module, 130A
• Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilitie |
Naina Semiconductor |
|
NTD12N10 | Power MOSFET NTD12N10 Power MOSFET 12 Amps, 100 Volts
N−Channel Enhancement−Mode DPAK
Features http://onsemi.com
V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A
• Source−to−Drain Diode Recovery |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |