डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTD | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o |
EDI |
|
NTD | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o |
EDI |
|
NTD08 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o |
EDI |
|
NTD10 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o |
EDI |
|
NTD106B | Thyristor/Diode Module Naina Semiconductor Ltd.
NTD106B
Features
Thyristor/Diode Module, 106A
• Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilitie |
Naina Semiconductor |
|
NTD110N02R | Power MOSFET NTD110N02R Power MOSFET
24 V, 110 A, N−Channel DPAK
Features
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Lo |
ON |
|
NTD12 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o |
EDI |
www.DataSheet.in | 2017 | संपर्क |