NJW0302G डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0281G ·Minimum Lot-to-Lot variations for robust

NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior

NJW0302G Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-3P 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-3P Plastic Package.  特征 / Features 用于 100W 高保真音频功�