डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NJW0302 | PNP Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
NJW0302
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0281 ·Minimum Lot |
INCHANGE |
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NJW0302G | PNP Power Transistor isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0281G ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
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NJW0302G | NPN-PNP Power Bipolar Transistors NJW0281G (NPN) NJW0302G (PNP)
Complementary NPN-PNP Power Bipolar Transistors
These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior |
ON Semiconductor |
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NJW0302G | Silicon PNP transistor NJW0302G
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions TO-3P 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-3P Plastic Package.
特征 / Features
用于 100W 高保真音频功� |
BLUE ROCKET ELECTRONICS |
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