डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NJW0281 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
NJW0281
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0302 ·Minimum Lot- |
INCHANGE |
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NJW0281G | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
NJW0281G
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0302G ·Minimum Lot-to-Lot variations for |
Inchange Semiconductor |
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NJW0281G | NPN-PNP Power Bipolar Transistors NJW0281G (NPN) NJW0302G (PNP)
Complementary NPN-PNP Power Bipolar Transistors
These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |