डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NJD2873 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
NJD2873
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current Gain -hFE = 120(Min)@ IC= 0.5A ·High Current-Gain—Band |
Inchange Semiconductor |
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NJD2873 | Power Transistors NJD2873, NJVNJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier applications.
Features
• High DC Current Gain • Low Collector−Emitter Satu |
ON Semiconductor |
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NJD2873T4 | Power Transistor www.DataSheet4U.com
NJD2873T4 Plastic Power Transistors
NPN Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier applications.
Features http://onsemi.com
• Pb−Free Package |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |