NE681 डाटा शीट PDF( Datasheet )

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz NE681 SERIES • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12

DATA SHEET SILICON TRANSISTOR NE68119 / 2SC5007 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD 1.6±0.1-OUT 1.0 0.5 0.5 0.2–+00.1 DESCRIPTION The NE68119 / 2SC5007 is an N

DATA SHEET NPN SILICON RF TRANSISTOR NE68130 / 2SC4227 JEITA Part No. NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DISCONTINUED DESCRIPTION The NE68

DDAATTAA SSHHEEEETT SILICON TRANSISTOR NE68133 / 2SC3583 JEITA Part No. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR +0.1UT −0.05 1.1PHASEto1.4 0.3 DESCRIPTION The NE68133 / 2SC3583

DDAATTAA SSHHEEEETT SILICON TRANSISTOR NE68139 / 2SC4094 JEITA Part No. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD 2.9±0.2 UT (1.8) 0.85 0.95 1.1−+00..12 PHASE0.8

DISCONTINUED NEC's NPN SILICON TRANSISTOR NE681M03 FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF perf

DISCONTINUED NEC's NPN SILICON TRANSISTOR NE681M13 FEATURES • NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for