डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NE662M16 | NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: |
NEC |
|
NE662M16 | NPN SILICON RF TRANSISTOR DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
FEATURES • Ideal for low noise high-gain amplificat |
CEL |
|
NE662M16-A | NPN SILICON RF TRANSISTOR DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
FEATURES • Ideal for low noise high-gain amplificat |
CEL |
|
NE662M16-T3 | NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: |
NEC |
|
NE662M16-T3-A | NPN SILICON RF TRANSISTOR DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
FEATURES • Ideal for low noise high-gain amplificat |
CEL |
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