NE650 डाटा शीट PDF( Datasheet )

NE650 Dolby B-Type Noise Reduction Circuit Product Specification DESCRIPTION The NE650 is a monolithic audio noise reduction circuit designed for use in Dolby™B-Type noise reduction systems. The NE650 is use

DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset

DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset

PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power i

L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS (TC= 25 °C unless otherwise noted) SYMBOLS VDSX VGDX VGSX IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate

NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES • LOW COST PLASTIC PACKAGE • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA • HIGH OUTPUT POWER: 40 dBm TYP • HIGH POWER ADDED EFFI

PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power