डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NE5520 | LVDT Signal Conditioner www.DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U.com
DataSheet 4 U .com
|
Ideal Semiconductor |
|
NE5520279A | NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTPUT POWER: +32 dBm TYP
5.7 MAX. 0.6±0.15
OUTLINE DIMENS |
NEC |
|
NE5520279A-T1 | NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTPUT POWER: +32 dBm TYP
5.7 MAX. 0.6±0.15
OUTLINE DIMENS |
NEC |
|
NE5520379A | 3.2V Operation Silicon RF Power LDMOS FET w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
|
NEC |
www.DataSheet.in | 2017 | संपर्क |