डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NE3510M04 | HETERO JUNCTION FIELD EFFECT TRANSISTOR DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
• Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 |
CEL |
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NE3510M04 | HETERO JUNCTION FIELD EFFECT TRANSISTOR | CEL |
www.DataSheet.in | 2017 | संपर्क |