NDT डाटा शीट PDF( Datasheet )

September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

August 1996 NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild'

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless

NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unles

NDT02N60Z N-Channel Power MOSFET 600 V, 8.0 W Features • 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Zener−protected • These Devices are Pb-Free, Halogen Free/

NDD03N40Z, NDT03N40Z N-Channel Power MOSFET 400 V, 3.4 W Features • 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Very Low Intrinsic Capacitance • Improved Diode