डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NDB6060 | N-Channel MOSFET March 1996
NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, h |
Fairchild |
|
NDB6060L | N-Channel FET NDP6060L / NDB6060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V.
These logic level N-Channel enhancement mode power fi |
ON Semiconductor |
|
NDB6060L | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
NDB6060L
FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 20mΩ(Max) @ VGS= 10V ·100% avala |
Inchange Semiconductor |
|
NDB6060L | N-Channel MOSFET April 1996
NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using |
Fairchild |
www.DataSheet.in | 2017 | संपर्क |