डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MTP5N40E | TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP5N40E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET
Designer's
MTP5N40E
Motorola Preferred Device
N–Channel Enhancement–Mode Sili |
Motorola |
|
MTP5N40E | High Energy Power FET MTP5N40E
Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET
N−Channel Enhancement−Mode Silicon Gate
This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanc |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |