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MTP3N50E | TMOS POWER FET MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP3N50E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET
Designer's
MTP3N50E
Motorola Preferred Device
N–Channel Enhancement–Mode Sili |
Motorola |
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MTP3N50E | TMOS E-FET MTP3N50E
Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET
N−Channel Enhancement−Mode Silicon Gate
This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanc |
ON Semiconductor |
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MTP3N50E | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |