MTP3055 डाटा शीट PDF( Datasheet )

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3055V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one

® MTP3055E N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET™ MOSFET T YPE MTP3055E s s s s s V DSS 60 V R DS(on) < 0.15 Ω ID 12 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TE

/= T SGS THOMSON HD©[^©[i[L[l(gTF^(Q)R!]D©S MTP3055A MTP3055AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055A MTP3055AFI Voss 60 V 60 V ^D S (o n ) 0.15 Q 0.15 0 ■ *D 12 A 10 A

/= T SGS THOMSON HD©[^©[i[L[l(gTF^(Q)R!]D©S MTP3055A MTP3055AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055A MTP3055AFI Voss 60 V 60 V ^D S (o n ) 0.15 Q 0.15 0 ■ *D 12 A 10 A

® MTP3055E N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET™ MOSFET T YPE MTP3055E s s s s s V DSS 60 V R DS(on) < 0.15 Ω ID 12 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TE

MTP3055V May 1999 MTP3055V N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. p

MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed