MTP2955 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2955E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP2955E Motorola Preferred Device P–Channel Enhancement–M

MTP2955V May 1999 DISTRIBUTION GROUP* MTP2955V P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel MOSFET has been designed specifically for low voltage, high speed switchin

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2955V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one

MTP2955V Preferred Device Power MOSFET 12 Amps, 60 Volts P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed

MTP2955V Preferred Device Power MOSFET 12 Amps, 60 Volts P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed