डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MTB55N06Z | TMOS POWER FET MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB55N06Z/D
Advance Information
TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
This adv |
Motorola |
|
MTB55N06Z | Power MOSFET MTB55N06Z
Preferred Device
Power MOSFET 55 Amps, 60 Volts
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This high energy device also off |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |