MT4600 डाटा शीट PDF( Datasheet )

07 P & N-Channel 100-V(D-S) MOSFET ‹ DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device id

 MT4600 Dual N & P-Channel Po werTrench® MOSFET Features • N-Channel 30V/5A, RDS (ON) = 28mΩ (max.) @ VGS =4.5V RDS (ON) = 38mΩ (max.) @ VGS =2.5V • P-Channel -30V/-4.6A, RDS (ON) = 63mΩ (max.)