डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MRFG35010 | Gallium Arsenide PHEMT RF Power Field Effect Transistor www.DataSheet4U.com
Freescale Semiconductor Technical Data
MRFG35010 Rev. 6, 12/2004
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS or UMTS driver applications with frequencies |
Freescale Semiconductor |
|
MRFG35010ANT1 | RF Power Field Effect Transistor www.DataSheet4U.com
Freescale Semiconductor Technical Data
Document Number: MRFG35010AN Rev. 0, 5/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applica |
Freescale Semiconductor |
|
MRFG35010AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor www.DataSheet4U.com
Freescale Semiconductor Technical Data
Document Number: MRFG35010A Rev. 1, 6/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WiMAX, WLL/MMDS or UMTS driver and f |
Freescale Semiconductor |
|
MRFG35010MT1 | RF Power Field Effect Transistor www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRFG35010MT1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Desig |
Motorola |
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