डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MRF6VP2600HR6 | RF Power FET Freescale Semiconductor Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatch |
Freescale Semiconductor |
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MRF6VP2600HR6 | RF Power FET | Freescale Semiconductor |
www.DataSheet.in | 2017 | संपर्क |