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MRF6S18060NR1 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 |
Freescale Semiconductor |
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MRF6S18060NR1 | RF Power Field Effect Transistors | Freescale Semiconductor |
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