डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MRF581G | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF581 MRF581G MRF581A MRF581AG
*G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15 |
Microsemi |
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MRF5811LT1 | NPN Silicon High Frequency Transistor | Motorola |
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MRF5812 | Bipolar Junction Transistor | Advanced Power Technology |
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MRF5812 | NPN Silicon RF Microwave Transistor | ASI |
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MRF581 | RF and Microwave Discrete Low Power Power Transistors | Advanced Power Technology |
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MRF581A | RF and Microwave Discrete Low Power Power Transistors | Advanced Power Technology |
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MRF581 | HIGH FREQUENCY TRANSISTOR | Motorola |
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MRF581 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi |
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MRF581AG | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi |
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MRF5812G | Bipolar Junction Transistor | Advanced Power Technology |
|
MRF581A | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi |
www.DataSheet.in | 2017 | संपर्क |