डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MRF5812G | Bipolar Junction Transistor MRF5812, R1, R2 MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Ef |
Advanced Power Technology |
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MRF5812 | Bipolar Junction Transistor | Advanced Power Technology |
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MRF5812 | NPN Silicon RF Microwave Transistor | ASI |
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MRF5812G | Bipolar Junction Transistor | Advanced Power Technology |
www.DataSheet.in | 2017 | संपर्क |