MRF581 डाटा शीट PDF( Datasheet )

MRF581 NPN SILICON RF TRANSISTOR DESCRIPTION: The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz. PACKAGE STYLE Dim. Are in mm FEATURES: • Low Noise Figure • Low Inte

MRF580 MAXIMUM RATINGS Rating Symbol MRF581 MRF581 Unit Collector-Emitter Voltage vCEO 18 18 Vdc Collector-Base Voltage vCBO 36 36 Vdc Emitter-Base Voltage —Collector Current Continuous vEBO "C

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ G

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5811LT1/D The RF Line NPN Silicon High-Frequency Transistor • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low

MRF5812 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. PACKAGE STYLE SO-8 FEATURES: • Low Noise – 2.5 dB @

MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Ef