डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MRF559 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF559 MRF559G
* G Denotes RoHS Complaint, Pb Free Terminal Finish
Features
• Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Ga |
Advanced Power Technology |
|
MRF559 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF559
Features
• Specified @ 12.5 V, 870 MHz Characteristics • Ou |
Microsemi |
|
MRF559 | NPN SILICON HIGH FREQUENCY TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon High-Frequency Transistor
. . . designed for UHF linear and large–signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics |
Motorola |
|
MRF559G | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF559 MRF559G
* G Denotes RoHS Complaint, Pb Free Terminal Finish
Features
• Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Ga |
Advanced Power Technology |
www.DataSheet.in | 2017 | संपर्क |