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MRF553 | NPN SILICON RF LOW POWER TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF553/D
The RF Line
NPN Silicon RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the VHF frequency range.
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Motorola |
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MRF553 | NPN SILICON RF TRANSISTOR MRF553
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF553 is designed for Low power amplifier applications.
FEATURES:
• 12.5 V, 175 MHz. • POUT = 1.5 W • GP = 11.5 min. • η = 60 % (Typ)
MAXIMUM R |
ASI |
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MRF553 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553 MRF553G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Fea |
Advanced Power Technology |
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MRF553 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• Specified @ 12.5 V, 175 MHz Characteristics • Output Powe |
Microsemi |
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MRF553G | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553 MRF553G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Fea |
Advanced Power Technology |
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