MRF517 डाटा शीट PDF( Datasheet )

MAXIMUM RATINGS Rating Collector-Emitter Voltage (Rbe = 330fi) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a T"c = 50°C Derate above 50°C Junction Tem

MRF517 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI MRF517 is Designed for High Linearity Class A Amplifier Applications in the 100 to 500 MHz Frequency Range. PACKAGE STYLE TO-39 MAXIMUM RATIN

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF517 Features • Silicon NPN, To-39 packaged VHF/UHF Transistor �

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39

www.DataSheet4U.com MRF5174 NPN RF POWER TRANSISTOR DESCRIPTION: The MRF5174 is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the 225 to 400 MHz Band. PACKAGE STYLE .280 4

www.DataSheet4U.com MRF5175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4

MRF5176 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5176 is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. FEATURES: • PG = 10 dB Typical at 400 MHz • Econ