डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MN638S | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable o |
INCHANGE |
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MN638S | Power Transistor Power Transistor MN638S
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VCBO
380±50
V
VCEO
380±50
V
VEBO
6V
IC
6 (pulse 10)
A
IB 1 A
PC
60 (Tc=25ºC)
W
Tj 150 ºC
Tstg
–55 to + |
Sanken |
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