MMST2907A डाटा शीट PDF( Datasheet )

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) MMST2907A FEATURES * Power dissipation Pcm: 0.2 W (Tamb=25OC) * Collector current Icm: -0.6 A * Collector-base voltag

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PNP General Purpose Transistor MMST2907A FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available(MMST2222A) MECHANICAL DATA • Case: SOT-323 Plastic • Case mat

PNP Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.(PC=200mW) Pb  Epitaxial planar die construction. Lead-free  Complementary NPN type MMST2222A. APPLICATIONS  General purpos

Features  BVCEO > -60V  IC = -600mA Collector Current  Epitaxial Planar Die Construction  Ultra-Small Surface Mount Package  Complementary NPN Type: MMST2222A  Totally Lead-Free & Fully RoHS C

UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor (Switching) UMT2907A / SST2907A / MMST2907A / PN2907A !Features 1) BVCEO< -60V (IC=-10mA) 2) Complements the UMT2222A / SST2222