MMBTA05 डाटा शीट PDF( Datasheet )

Small Signal Product MMBTA05 Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Pb free versi

Elektronische Bauelemente MMBTA05 NPN Silicon Epitaxial Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION  The MMBTA05 is Amplifier Transistor FEATURES 

MMBTA05,06 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) DRIVER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuou

Production specification NPN General Purpose Transistor FEATURES  High breakdown voltage.  Complementary PNP type available Pb Lead-free (MMBTA55/MMBTA56).  Low collector-emitter saturation voltag

Plastic-Encapsulate Transistors FEATURES · Epitaxial Planar Die Construction · Complementary PNP Types Available (MMBTA55 / MMBTA56) · Ideal for Medium Power Amplification and Switching MMBTA05 MMBTA06 (N

Features  Epitaxial Planar Die Construction  Ideal for Low Power Amplification and Switching  Complementary PNP Type: MMBTA55 & MMBTA56  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Ha

MPSA05 / MMBTA05 — NPN General-Purpose Amplifier MPSA05 / MMBTA05 NPN General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA.