MMBT5551 डाटा शीट PDF( Datasheet )

SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) Formosa MS FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching MARKING: G1 SOT-23 1. BASE 2. EMITTER - 3

MMBT5551 Silicon NPN Transistor High Voltage Amp/Driver SOT−23 Type Surface Mount Package Description: The MMBT5551 is a silicon NPN transistor in an SOT−23 type surface mount case designed for use in high

SMD High Voltage Transistor (NPN) MMBT5550/MMBT5551 SMD High Voltage Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanic

Features ■ Ideal for medium power amplification and switching ■ Complementary PNP MMBT5401 Applications ■ General Purpose Amplifier ■ Switching Absolute Maximum Ratings (TA=25°C unless otherwise noted

Elektronische Bauelemente MMBT5551 600mA, 160V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Ideal for Medium Power Amplification an

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT5401) • Ideal for Low Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant • "Green"

2N5551 / MMBT5551 — NPN General-Purpose Amplifier August 2018 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge