MMBT5401LT1 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5401LT1/D High Voltage Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT5401LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector �

MMBT5401LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Vol

RoHS MMBT5401LT1 TRANSISTOR (PNP) SOT-23 Plastic-Encapsulate Transistors Features DPower dissipation PCM : 0.3 W (Tamb=25OC) TCollector current .,LICM : -0.6A Collector-base Voltage V(BR)CBO :-160V OOperating

TIGER ELECTRONIC CO.,LTD MMBT5401LT1 PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Em

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT5401LT1 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.6 Colle

MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu