MMBT5401 डाटा शीट PDF( Datasheet )

Production specification PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.  Complementary NPN type available (MMBT5551).  Also available in lead free version. Pb Lead-free

MMBT5401 150V PNP HIGH-VOLTAGE TRANSISTOR IN SOT23 Features  Epitaxial Planar Die Construction  Complementary NPN Type - MMBT5551  Ideal for Low Power Amplification and Switching  Totally Lead-Free

MMBT5401 — PNP Epitaxial Silicon Transistor November 2014 MMBT5401 PNP Epitaxial Silicon Transistor Features • PNP General-Purpose Amplifier • This device is designed as a general-purpose amplifier and

UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc(max)=350mW *High current gain

MMBT5401 — PNP Epitaxial Silicon Transistor MMBT5401 PNP Epitaxial Silicon Transistor Features • PNP General-Purpose Amplifier • This device is designed as a general-purpose amplifier and switch for app

www.DataSheet4U.com MMBT5400 / MMBT5401 MMBT5400 / MMBT5401 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – V

PNP General Purpose Transistor MMBT5401 FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available(MMBT5551) MECHANICAL DATA • Case: SOT-23 Plastic • Case materia