MMBT5089 डाटा शीट PDF( Datasheet )

2N5088 / MMBT5088 / 2N5089 / MMBT5089 Discrete POWER & Signal Technologies 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 E SOT-23 Mark: 1Q / 1R B NPN General Purpose Amplifier This device is designed fo

UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  DESCRIPTION The devices are designed for low noise, high gain, general purpose amplifier application

Production specification Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Power dissipation.(PC=0.2W). Pb Lead-free MMBT5088/5089 APPLICATIONS z This device is designed for low noi

MMBT5089【NPN Transistors / 200mW / SOT-23】 Features ◆ For low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA. PACKAGE OUTLINE Absolute Maximum Ratings�

MMBT5089 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features 低噪声，高增益。 Low n

MMBT5089 NPN General Purpose Amplifier For low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Ma