MMBT5088 डाटा शीट PDF( Datasheet )

2N5088 / MMBT5088 / 2N5089 / MMBT5089 Discrete POWER & Signal Technologies 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 E SOT-23 Mark: 1Q / 1R B NPN General Purpose Amplifier This device is designed fo

UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  DESCRIPTION The devices are designed for low noise, high gain, general purpose amplifier application

Production specification Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Power dissipation.(PC=0.2W). Pb Lead-free MMBT5088/5089 APPLICATIONS z This device is designed for low noi

Low Noise NPN Transistor Surface Mount P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-B as e Voltage E m itter-B as e Voltage Collector Current-Continuous Thermal Characteristics C

SMD Type TransistIoCrs NPN General Purpose Amplifier MMBT5088,MMBT5089 Features NPN general purpose amplifier +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5088LT1/D Low Noise Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT5088LT1 MMBT5089LT1* *Motorola Preferred Device MAXIMUM RATINGS Rating C