MMBT3906L डाटा शीट PDF( Datasheet )

Small Signal Product MMBT3906L Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (

MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Ca

ADVANCE INFORMATION MMBT3906LP 40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features  BVCEO > -40V  IC = -200mA High Collector Current  PD = 1000mW Power Dissipation  0.60mm2 Package Footprint, 13 t

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3906LT1/D General Purpose Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT3906LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP) FEATURES ·As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitax

RoHS MMBT3906LT1 SOT-23 TRANSISTOR Dimensions(Unit:mm) SOT-23 GENERAL PURPOSE TRANSISTOR Complementary Pair with MMBT3904LT1. DCollector Dissipation:Pc=225mW Collector-Emitter Voltage:VCEO=-40V .,LTPNP Epit

TIGER ELECTRONIC CO.,LTD MMBT3906LT1 PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT3906LT1 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings • Maximum Tem