MMBT3906 डाटा शीट PDF( Datasheet )

Features • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBT3904 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen

MMBT3906 200mA General Purpose PNP Epitaxial Planar Transistor ■ Features • High collector-emitterbreakdien voltage. (BVCEO = -40V@IC=1mA). • Small load switch transistor with high gain and low stauratio

MMBT3906 PNP Small Signal Transistor Features ■ PNP transistor, Complementary Type MMBT3904 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter

2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applicati

® MMBT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type MMBT3906 s Marking 36 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND RE

2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier April 2014 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switchi

PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good m