MMBT2907 डाटा शीट PDF( Datasheet )

Production specification PNP General Purpose Amplifier FEATURES z Epitaxial planar die construction. z Ideal for medium power amplification and switching. Pb Lead-free MMBT2907 APPLICATIONS z This device i

PNP EPITAXIAL SILICON TRANSISTOR MMBT2907/ALT1 GENERAL PURPOSE TRANSISTOR ▪ Complement to MMBT2222/ALT1 ▪ Collector Dissipation: Pc(max)=225mW Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Charact

PNP GENERAL PURPOSE AMPLIFIER „ FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) „ ORDERING INFORMATION Device Package Shipping† MMBT2907 SOT −23 3000 / Tape

REPLACEMENT TYPE : MMBT2907 FEATURES  Epitaxial Planar Die Construction  Complementary NPN Type Available(HABT2222) HABT2907(PNP) SWITCHING TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

PN2907 / MMBT2907 — PNP General-Purpose Transistor January 2014 PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requ

MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A PNP Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage Version 2015-05-12 0.4+0.1 -0.05 2.9 ±0.1 3