डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MMBT2369 | NPN General Purpose Amplifier NPN General Purpose Amplifier
FEATURES
z Epitaxial planar die construction. z Ultra-small surface mount package.
Pb
Lead-free
Production specification
MMBT2369
APPLICATIONS
z Use as a medium power amplifier |
GME |
|
MMBT2369 | Surface Mount Si-Epi-Planar Switching Transistors MMBT2369 / MMBT2369A
MMBT2369 / MMBT2369A
NPN
Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage
Version 2006-06-02
2.9 ±0.1 0.4 3
Type Code
1
|
Diotec |
|
MMBT2369 | NPN Switching Transistor MMBT2369 / PN2369 — NPN Switching Transistor
MMBT2369 / PN2369 NPN Switching Transistor
• This device is designed for high speed saturated switching at collector currents of 10mA to 100mA.
• Sourced from |
Fairchild |
|
MMBT2369 | NPN Silicon Switching Transistor MMBT2369 / MMBT2369A
NPN Silicon Switching Transistor
TO-236 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter |
SEMTECH |
|
MMBT2369-G | GENERAL PURPOSE TRANSISTORS www.DataSheet4U.com
General Purpose Transistors
COMCHIP
SMD Diodes Specialist
MMBT2369-G (NPN)
RoHS Device
Features
-Power dissipation P C =0.3W
0.056(1.40) 0.047(1.20)
SOT-23
0.119(3.00) 0.110(2.80)
3
Ma |
Comchip Technology |
|
MMBT2369A | NPN Silicon Epitaxial Planar Transistors MMBT2369A【NPN Transistors/ 200mW / SOT-23】
NPN Silicon Epitaxial Planar Transistors
Features ◆ For Switching and Amplifier Applications PACKAGE OUTLINE
Absolute Maximum Ratings【TA=25℃】
Parameter
|
HORNBY |
|
MMBT2369A | NPN GENERAL PURPOSE SWITCHING TRANSISTOR MMBT2369A
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 15 Volts POWER 225 mWatts
FEATURES
• NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 15V • Collector current IC = 200mA � |
Pan Jit International |
www.DataSheet.in | 2017 | संपर्क |