MMBT2222AW डाटा शीट PDF( Datasheet )

SMD Type General Purpose Transistor MMBT2222AW TransistIoCrs Features General purpose transistor. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector

MMBT2222W / MMBT2222AW NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Vol

.004(.10)MIN. .087(2.2) .078(2.0) UPM MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR Voltage Range 40 Volts Power 150 Watts Features * NPN epitaxial silicon, planar design * Collector-emitter voltage VC

MMBT2222W / MMBT2222AW NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Vol

MMBT2222AW=P1 VCEO MMBT2222AW Value 3 1 2 SOT-323(SC-70) TJ ,Tstg 150 833 -55 to+150 (1) 1. Pulse Test: Pulse Width 300us, Duty Cycle 2.0% u WEITRON http://www.weitron.com.tw MMBT2222AW ELECTRICAL C

MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 Unit：inch(mm) FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • C

Elektronische Bauelemente MMBT2222AW NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE  Complementary PNP Type Available(MMBT2907AW)