MMBT2222AT डाटा शीट PDF( Datasheet )

Features  BVCEO > 40V  IC = 600mA Collector Current  Epitaxial Planar Die Construction  Ultra-Small Surface Mount Package  Complementary PNP Type: MMBT2907AT  Totally Lead-Free & Fully RoHS Co

Production specification NPN SWITCHING TRANSISTOR FEATURES z Epitaxial planar die construction. z Complementary PNP type available (MMBT2907AT). z Collector Current Capability Ic=600mA. z Ultra-small surface

MMBT2222AT — NPN Epitaxial Silicon Transistor MMBT2222AT NPN Epitaxial Silicon Transistor Features • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • General p

MMBT2222AT Rev.E Nov.-2016 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package.  特征 / Features 当 IC 电流达到 600mA �

MMBT2222AT Plastic-Encapsulate Transistors NPN Silicon P b Lead(Pb)-Free MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous COLLECTOR 3 1

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RoHS MMBT2222AT MMBT2222AT TRANSISTOR (NPN) SOT-523 FEATURES 1. BASE Power dissipation PCM: 0.15 W (Tamb=25℃) DCollector current ICM: 0.6 A TCollector-base voltage V(BR)CBO: 75 V .,LOperating and