MMBD701 डाटा शीट PDF( Datasheet )

MMBD701 3 CONNECTION DIAGRAM 3 PACKAGE SOT-23 TO-236AB (Low) 1 5HF 1 2 NC SOT-23 TO236AB 2 PACKAGE Schottky Barrier Diode Sourced from Process GE Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC u

MMBD701 Features * Low Turn-on Voltage For UHF andVHF detector application * Alsosuitable for someothers Fast Switching RF and digital application * Extremely LowMinority Carrier Lifetime-15ps(Typ) * Low Rever

MMBD701 SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 70 Volts POWER 180mWatts FEATURES • Extremely low minority carrier lifetime • Low capacitance (0.4pF @ 20V typical) • Low reverse leakage (30nA @ 35V typi

Schottky Barrier Diodes FEATURES z Surface mount package ideally suited for automatic insertion. Pb Lead-free Production specification MMBD701 APPLICATIONS z Sourced from process GE. ORDERING INFORMATION S

® WON-TOP ELECTRONICS MMBD701 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Very Low Capacitance  Low Reverse Leakage  PN Junction Guard Ring for Transient and ESD Protection  For General Pur

MBD701, MMBD701L, SMMBD701L Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many

www.DataSheet4U.com MBD701, MMBD701LT1 Preferred Device Silicon Hot−Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They