डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJE801 | NPN Transistor MJE800/801/802/803
MJE800/801/802/803
Monolithic Construction With Built-in BaseEmitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703
1
TO-12 |
Fairchild |
|
MJE801 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 60 V ·DC Current Gain—
: hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A
·Complement to Type MJE7 |
INCHANGE |
|
MJE801 | (MJE800 - MJE803) SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-126 package www.datasheet4u.com ·Complement to type MJE700/701/702/703 ·High DC current gain ·DARLINGTON APP |
SavantIC |
|
MJE801 | Transistor MJE700 THRU MJE703 PNP MJE800 THRU MJE803 NPN
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium pow |
Central Semiconductor |
|
MJE801T | POWER TRANSISTOR MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700T, MJE800T series devices are medi |
Central Semiconductor |
|
MJE801T | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 60 V ·DC Current Gain—
: hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A
·Complement to Type MJE7 |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |