MJE520 डाटा शीट PDF( Datasheet )

Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 3.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to

SGS-THOMSON MJE370 MJE520 COMPLEMENTARY MEDIUM POWER TRANSISTORS DESCRIPTION The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec TO-126 plastic package, designed fo