MJE2955T डाटा शीट PDF( Datasheet )

MJE2955T Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220 Plastic Package.  特征 / Features 直流电流大，特征频率�

isc Silicon PNP Power Transistor MJE2955T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= -4A ·Complement to Type MJE3055T ·Minimum Lot-to

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE2955T/D Complementary Silicon Plastic Power Transistors MJE2955T * NPN MJE3055T * *Motorola Preferred Device PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎ

MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High Current Gain − B

MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in

MJE2955T MJE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz (Min.) 1 TO-220 2.Collector 3.Emitter 1.Base PNP

UNISONIC TECHNOLOGIES CO., LTD MJE2955T PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1