MJD44H11 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applicatio

SMD Type Transistors Complementary Power Transistors MJD44H11 Features Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching Speeds Complementary Pairs Simplifies Designs Pb-Free Packa

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H11/D Complementary Power Transistors • • • • • • • MJD44H11 * PNP MJD45H11 * *Motorola Preferred Device NPN DPAK For Surfac

MJD44H11, MJD45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4")

MJD44H11 — NPN Epitaxial Silicon Transistor April 2015 MJD44H11 NPN Epitaxial Silicon Transistor Features • General-Purpose Power and Switching such as Output or Driver Stages in Applications • D-PAK f

MJD44H11 (NPN), MJD45H11 (PNP) Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as

MJD44H11 80 V, 8 A NPN high power bipolar transistor 27 May 2019 Preliminary data sheet 1. General description NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic packag