MJD41C डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Complement to Type MJD42C ·DPAK for Surface Mount App

SMD Type Transistors Complementary Power Transistors MJD41C(NPN) MJD42C(PNP) Features Lead Formed for Surface Mount Applications in Plastic Sleeves Monolithic Construction With Built?in Base ? Emitter Resist

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surf

MJD41C MJD41C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffi

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD41C/D Complementary Power Transistors • • • • • MJD41C* PNP MJD42C* *Motorola Preferred Device NPN DPAK For Surface Mount Applicat

Epitaxial Planar NPN Transistor FEATURES  Low formed for surface mount application. Pb Lead-free  Electrically similar to popular and TIP41C.  Straight Lead. APPLICATIONS  General purpose ampl

Features  BVCEO > 100V  IC = 6A Continuous Collector Current  ICM = 10A Peak Pulse Current  Ideal for Power Switching or Amplification Applications  Complementary PNP Type: MJD42C  Lead-Free F