MJD32C डाटा शीट PDF( Datasheet )

Features  BVCEO > -100V  IC = -3A high Continuous Collector Current  ICM = -5A Peak Pulse Current  Ideal for Power Switching or Amplification Applications  Complementary NPN Type: MJD31C  Tota

isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD32C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) ·Complement to Type MJD31C

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Halogen free available upon request by addin

SMD Type Transistors Complementary Power Transistors MJD31,MJD31C(NPN) MJD32,MJD32C(PNP) Features Lead Formed for Surface Mount Applications in Plastic Sleeves Pb-Free Packages are Available +09.70 .2 -0.2

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY PLASTIC POWER TRANSISTORS MJD31, C NPN MJD32, C PNP DPAK (TO-252) Plastic Package Designed for General

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJD32C TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. Pin

Epitaxial Planar PNP Transistor FEATURES z Low formed for surface mount Pb application. Lead-free z Electrically similar to popular and TIP32C. z Straight Lead. APPLICATIONS z General purpose amplifier